Cross Section of Gate-All-Around Transistor and Wiring Applied Materials introduced three new chipmaking systems that boost ...

Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor.

A new technical paper, “3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography,” was published by researchers at Cornell University, ASM ...

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Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...