Nexperia has announced a second generation of 650V gallium nitride power transistors, claiming reduced on-resistance and, with its surface-mount copper clip package (right), reduced inductance. Called ...
Nexperia has released a new range of GaN FET devices that feature next-generation high-voltage GaN HEMT H2 technology, targeting automotive, 5G, and data center applications. The devices are housed in ...
The IRFH5xxxTRPBF HEXFET power MOSFETs are midvoltage devices available in a 5 x 6-mm PQFN package with a copper clip and solder die. They suit switching applications including dc/dc converters for ...
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