Memory IP vendor Rambus is extending its extreme-data-rate DRAM roadmap, announcing this week it has designed XDR2 DRAM interface IP that uses microthreading techniques to extend data rates into the 8 ...
Samsung Electronics Co., Ltd. today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class* process technology. The new wide I/O mobile DRAM will ...
SSTL_18/ SSTL_2/ LPDDR/ LVTTL COMBO interface for DRAM application;; 2).Suppport ONFI3.1/Toggle2.0 interface;; 3).SMIC 55nm Logic Low Leakage Salicide 1.2V/1.8V/2.5V ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., announced today that it has begun mass producing the industry’s first 4-gigabyte (GB) DRAM package based on the second-generation ...
Samsung Electronics has developed a new DRAM module based on the Compute Express Link (CXL) interface, something that the company has touted as an industry first. The CXL-based DDR5 memory module ...
Today Rambus launched XDR2, which is the successor to the existing XDR a.k.a. “Yellowstone” DRAM interface technology that’s being used in the PS3. XDR2 DRAM is essentially an evolutionary step over ...
Designers can choose from different strngths of SDRAM, RDRAM, DDR1/2, GDDR, and XDR to fit specific applications. During its 30-plus years, the venerable dynamic RAM has undergone a series of ...
Most of the processors contained within automobiles are relatively small and with modest memory requirements that can be served by SRAM and non-volatile memory. The type of computing, image processing ...
Samsung on Tuesday announced that it has begun mass production of 4GB DRAM packages based on the second generation High Bandwidth Memory (HBM2) interface using its 20-nanometer manufacturing process.
A new technical paper titled “A Case for Self-Managing DRAM Chips: Improving Performance, Efficiency, Reliability, and Security via Autonomous in-DRAM Maintenance Operations” was published by ...
SEOUL, Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, ...
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