Developed for the wireless infrastructure market, the 30W 1920LD30 and 85W 1920LD85 lateral diffusion metal oxide semiconductor transistors (LDMOs) feature gold metalization and ESD protection ...
Length of diffusion effects in MOS BSIM models can significantly impact analog circuit simulations at 130 nanometers and below. These effects, also known as stress effects from the shallow trench ...
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