Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet ...
DALLAS--(BUSINESS WIRE)--July 11, 2006--Hitachi High-Technologies America, Ltd. today announced that it is working with multiple leading integrated device manufacturers (IDMs) to develop new high-k ...
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Joint research validates new semiconductor etching process, achieving five times speed improvement
A collaborative research team from Nagoya University and Tokyo Electron Miyagi Ltd. has demonstrated that the company's new ...
In this technique, fluorine-based plasma chemistry is used for silicon etching, which is combined with a fluorocarbon plasma process to offer sidewall passivation and enhanced selectivity to masking ...
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