The HVV0405-175 high-voltage vertical field-effect transistor (HVVFET) suits radar applications in the UHF band. Operating across the 420 to 470-MHz band, it offers system designers a qualified 175-W ...
High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...
Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
High voltage nanosecond pulse generation using avalanche transistors represents a transformative avenue in the field of pulsed power technology. Exploiting the intrinsic properties of avalanche ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Yokogawa said its latest high-voltage, wide-bandwidth probe can stay on top of the faster switching speeds of next-generation power electronics like SiC. A new high-voltage, wide-bandwidth probe gives ...
Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain transistors, where all ...
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Voltage and power integrity are becoming increasingly critical and challenging for chip designers and architects, regardless of which process technology they are using or which market they are ...