This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
System efficiency is an important consideration when inverters are used in photovoltaic, UPS, and motor drive applications. One approach to achieving improved efficiency is to replace the usually-used ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...
Renesas Electronics Corp. has announced the development of a new series of silicon (Si) insulated gate bipolar transistors (IGBTs) with low power losses in a small footprint. Targeting next-generation ...
Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...
SemiSouth, a little-know semiconductor firm from Mississippi, is introducing high-power silicon carbide JFETs to replace silicon IGBTs and silicon mosfets in high power inverters. The firm already ...
Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...
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