The new gate driver family supports up to 600V operation, expanding the company’s high-voltage power solutionsCHANDLER, Ariz.
To meet the needs of high-voltage power management applications, Microchip Technology announces its 600V gate driver ...
When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...
This application note covers the topic of calculating gate driver power and thermal dissipation of the gate drive optocoupler IC. Gate drive optocouplers are used to drive, turning-on and off, power ...
Silicon Carbide (SiC) power semiconductors are rapidly emerging in the commercial market. These devices offer several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can ...
STMicroelectronics has introduced a new family of ultra‑compact synchronous‑rectifier controllers designed to improve ...
BIEL, Switzerland--(BUSINESS WIRE)--IGBT gate driver manufacturer CT-Concept Technologie GmbH, a Power Integrations company, has announced the availability of its 1SC0450V single driver core for IGBT ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has released “TCK421G” for 20V power lines as the first product in its new “TCK42xG Series” of MOSFET ...
Leveraging ST’s robust silicon-on-insulator (SOI) process, the SRK1004 can control the MOSFET in either low-side or high-side ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
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