New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power Infineon Technologies AG (IFX: FSE, NYSE), a leading supplier ...
As the demand for greater communication bandwidth continues to grow, next-generation satellites must deliver higher data ...
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Infineon allegedly hikes prices of power switches and ICs amid AI boom — knock-on pricing could impact virtually all electronic devices
Infineon reportedly notifies customers about price hikes effective April 1, 2026 ...
Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...
There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a ...
Infineon Technologies AG is exhibiting its semiconductor, software and tooling solutions, meeting green and digital transformation challenges, at PCIM Europe 2024. The company will demonstrate its ...
Infineon Technologies has introduced a new family of high-voltage discretes, the CoolGaN Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Infineon Technologies has integrated 600V GaN HD-GIT (hybrid-drain-embedded gate injection transistor) manufacturing into its production line. “The portfolio of discrete and integrated power stage ...
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