TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

Engineers in the automotive space are faced with the challenges of delivering inverter designs with increased efficiency, higher drive current and greater immunity to noise, especially in hybrid ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...

A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...

NXP Semiconductors is supplying a family of isolated gate-driver ICs to control the silicon-carbide (SiC) power switches at the heart of ZF Friedrichshafen’s next-gen electric-vehicle (EV) traction ...

ST’s STDRIVE102 gate-driver ICs for three-phase brushless motors have been augmented by the STDRIVE102P and STDRIVE102BP that feature an SPI interface to simplify configuring the gate current and ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

Large-area active-matrix panels suffer from timing distortion caused by resistive–capacitive (RC) accumulation along extended signal lines. To minimize signal propagation length and reduce accumulated ...