The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

For many decades, progress in electronics has been driven by a gradual reduction in the size of silicon transistors (electronic switches). However, this scaling is becoming increasingly difficult and ...

Washington, D.C. &#151 Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...